Synchrotron Defect Cartography Characterizes Thick 4H SiC Power Wafer Epitaxy and Dislocation Evolution Growth Mechanisms
DOI:
https://doi.org/10.71465/jgs57Keywords:
Silicon Carbide, Synchrotron Topography, Defect Cartography, Thick Epitaxy, Power ElectronicsAbstract
The rapid advancement of high-voltage power electronics has accelerated the demand for superior wide bandgap semiconductors, prominently positioning silicon carbide as a foundational material for next-generation energy conversion systems. Specifically, the 4H polytype of silicon carbide offers exceptional critical electric field strength, high thermal conductivity, and superior electron mobility, enabling the fabrication of power devices that operate efficiently under extreme voltages and temperatures. However, the development of devices engineered to withstand voltages exceeding ten kilovolts necessitates the growth of extremely thick epitaxial drift layers, often surpassing one hundred micrometers. Such thick epitaxial layers introduce complex challenges related to the propagation, conversion, and multiplication of crystallographic defects during the chemical vapor deposition process. This paper presents a comprehensive investigation into the spatial distribution and morphological evolution of these extended defects using synchrotron X-ray topography, proposing a high-resolution defect cartography framework. By leveraging the unparalleled brilliance and high penetration capabilities of synchrotron radiation, this methodology enables non-destructive, full-wafer mapping of basal plane dislocations, threading screw dislocations, threading edge dislocations, and stacking faults in exceptionally thick layers. The cartographic approach integrates advanced image stitching algorithms and automated defect recognition techniques to provide quantitative mapping across large-area substrates. The findings reveal critical insights into the dynamic transformation of defects as a function of epitaxial thickness, offering a predictive diagnostic tool that is essential for optimizing bulk growth parameters and enhancing the yield of high-power bipolar devices.
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Copyright (c) 2026 Patrick Henderson, Hazel Ellis, Nathan Mitchell, Logan Reed (Author)
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